www.kesenes.com 1 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 npn transistors absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5v collector current -continuous i c 0.1 a collector power dissipation p c 0.2 w junction temperature t j 150 storage temperature t stg -55to150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo ic=100ua, i e =0 50 v collector-emitter breakdown voltage v ceo ic=1ma, i b =0 45 v emitter-base breakdown voltage v ebo i e =100 a, i c =0 5v collector cutoff current i cbo v cb =50v, i e =0 0.1 a emitter cutoff current i ebo v eb =5v, i c =0 0.1 a dc current gain h fe v ce =5v, i c =1ma 200 1000 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma 0.5 v base-emitter saturation voltage v be(sat) i c =100ma, i b =10ma 1 v transition frequency f t v ce =5v, i c =10ma,f=30mhz 150 mhz features excellent h fe linearity collector current :i c =0.1a h fe classification marking rank l h hfe 200 to 450 450 to 1000 j6
2 smd type diodes smd type transistors typical characteristics fig.1 static characteristic fig.2 dc current gain fig.3 base-emitter saturation voltage collector- emitter saturation voltage fig. 4 current gain bandwidth product
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